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| Datasheet File OCR Text: |
| features high-speed switching no secondary breakdown. absolute maximum ratings ta = 25 parameter symbol n-channel p-channel unit drain to source voltage v dss 300 -300 v gate to source voltage v gs 20 20 v drain current ts = 80 *1 i d 340 -235 a peak drain current *2 i dm 14 -0.9 a total power dissipation t s =80 ;*3 t amb =25 ;*4 t amb =25 ;*5 t amb =25 ;*6 storage temperature t stg operating junction temperature t j thermal resistance from junction to soldering point r th j-s k/w *1. ts is the temperature at the soldering point of the drain leads. *2. pulse width and duty cycle limited by maximum junction temperature. *3. maximum permissible dissipation per mos transistor. (so both devices may be loaded up to 1.6 w at the same time). *4. maximum permissible dissipation per mos transistor. value based on a printed-circuit board with an rth a-tp (ambient to tie-point) of 27.5 k/w. *5. maximum permissible dissipation per mos transistor. value based on a printed-circuit board with an r th a-tp (ambient to tie-point) of 90 k/w. *6. maximum permissible dissipation if only one mos transistor dissipates. value based on a printed-circuit board with an r th a-tp (ambient to tie-point) of 90 k/w. w -55to150 -55to150 43 p tot 1.6 1.8 0.9 1.2 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors KHC2300 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons type min typ max unit v gs =0;i d =10 a n-ch 300 v v gs =0;i d =-10 a p-ch -300 v v gs =v ds ;i d = 1 ma n-ch 0.8 2 v v gs =v ds ;i d =-1ma p-ch -0.8 -2 v v gs =0;v ds = 240 v n-ch 100 na v gs =0;v ds = -240 v p-ch -100 na n-ch 100 na p-ch 100 na v gs =10v;i d = 170m a n-ch 8 v gs =-10v;i d = -115m a p-ch 17 v gs =0;v ds = 50 v; f = 1 mhz n-ch 57 pf v gs =0;v ds = -50 v; f = 1 mhz p-ch 45 v gs =0;v ds = 50 v; f = 1 mhz n-ch 15 v gs =0;v ds = -50 v; f = 1 mhz p-ch 15 v gs =0;v ds = 50 v; f = 1 mhz n-ch 2.6 pf v gs =0;v ds = -50 v; f = 1 mhz p-ch 3 pf v gs =10v;v ds =50v;i d = 170m a n-ch 2097 nc v gs =10v;v ds =-50v;i d =-115m a p-ch 2137 nc v gs =10v;v ds =50v;i d = 170m a n-ch 75 nc v gs =-10v;v ds =-50v;i d = -115m a p-ch 68 nc v gs =10v;v ds =50v;i d = 170m a n-ch 527 nc v gs =-10v;v ds =-50v;i d = -115m a p-ch 674 nc v gs =0 to 10 v; v dd =50v;i d =170ma n-ch 2.5 10 ns v gs =0to-10v;v dd =-50v;i d = -115ma p-ch 4 10 ns v gs =10to0v;v dd =50v;i d =170ma n-ch 17 30 ns v gs =-10to0v;v dd =-50v;i d =-115ma p-ch 25 35 ns v (br)dss drain-source breakdown voltage v gsth gate-source threshold voltage v gs = 20 v; v ds =0 i dss drain-source leakage current i gss gate leakage current c iss input capacitance r dson drain-source on-state resistance c oss output capacitance c rss reverse transfer capacitance q g total gate charge q gs gate-source charge t off turn-off time q gd gate-drain charge t on turn-on time KHC2300 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification |
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